K06N60 Datasheet

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K06N60 Datasheet - Fast IGBT

K06N60   K06N60  

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SKP06N60 SKA06N60 Fast IGBT in NPT-techn ology with soft, fast recovery anti-par allel Emitter Controlled Diode  75% lower Eoff compared to previous genera tion combined with low conduction losse s  Short circuit withstand time – 10 s  Designed for: Motor contr ols, Inverter  NPT-Technology for 6 00V applications offers: - very tight parameter distribution - high ruggedne ss, temperature stable behaviour - par allel switching capability  Very so ft, fast recovery anti-parallel Emitter Controlled Diode PG-TO-220-3-1 (TO-22 0AB)  Isolated TO-220, 2.5kV, 60s  Pb-free lead plating; RoHS complian t  Qualified according to JEDEC1 for target applications  Complete product spectrum and PS

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