DatasheetsPDF.com

K1056 Datasheet

Part Number K1056
Manufacturers Renesas
Logo Renesas
Description 2SK1056
Datasheet K1056 DatasheetK1056 Datasheet (PDF)

2SK1056, 2SK1057, 2SK1058 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes • Suitable for audio power amplifier Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1 2 3 S REJ03G0906-0200 (Previous: ADE-208-1244) Rev.2.00.

  K1056   K1056






Part Number K1058
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N-Channel MOSFET
Datasheet K1056 DatasheetK1058 Datasheet (PDF)

2SK1056, 2SK1057, 2SK1058 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes • Suitable for audio power amplifier Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1 2 3 S REJ03G0906-0200 (Previous: ADE-208-1244) Rev.2.00.

  K1056   K1056







Part Number K1057
Manufacturers Renesas
Logo Renesas
Description 2SK1057
Datasheet K1056 DatasheetK1057 Datasheet (PDF)

2SK1056, 2SK1057, 2SK1058 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes • Suitable for audio power amplifier Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1 2 3 S REJ03G0906-0200 (Previous: ADE-208-1244) Rev.2.00.

  K1056   K1056







Part Number K1053
Manufacturers Sanyo
Logo Sanyo
Description 2SK1053
Datasheet K1056 DatasheetK1053 Datasheet (PDF)

Ordering number:EN3440 Features · Low ON-state resistance. · Ultrahigh-speed switching. N-Channel Silicon MOSFET 2SK1053 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1053] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperatu.

  K1056   K1056







Part Number K1052
Manufacturers Sanyo
Logo Sanyo
Description 2SK1052
Datasheet K1056 DatasheetK1052 Datasheet (PDF)

Ordering number:EN3439 Features · Low ON-state resistance. · Ultrahigh-speed switching. N-Channel Silicon MOSFET 2SK1052 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1052] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperatu.

  K1056   K1056







2SK1056

2SK1056, 2SK1057, 2SK1058 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes • Suitable for audio power amplifier Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1 2 3 S REJ03G0906-0200 (Previous: ADE-208-1244) Rev.2.00 Sep 07, 2005 1. Gate 2. Source (Flange) 3. Drain Rev.2.00 Sep 07, 2005 page 1 of 5 2SK1056, 2SK1057, 2SK1058 Absolute Maximum Ratings Item Drain to source voltage 2SK1056 2SK1057 2SK1058 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C Electrical Characteristics Symbol VDSX VGSS ID IDR Pch*1 Tch Tstg Item Drain to source 2SK1056 breakdown volta.


2018-07-11 : P4KE300A    P4KE300    P4KE250    P4KE250A    P4KE220A    P4KE200A    P4KE220    P4KE200    P4KE180    P4KE180A   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)