K1062 Datasheet





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K1062 Datasheet - 2SK1062

K1062   K1062  

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed S witching Applications Analog Switching Applications Interface Applications 2S K1062 Unit: mm • Excellent switching time: ton = 14 ns (typ.) • High forw ard transfer admittance: |Yfs| = 100 ms (min) @ID = 50 mA • Low on resistanc e: RDS (ON) = 0.6 Ω (typ.) @ ID = 50 mA • Enhancement-mode • Complementa ry to 2SJ168 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gat e-source voltage Drain current DC Pul se Drain power dissipation (Ta = 25°C ) Channel temperature Storage tempera ture range VDS VGSS ID IDP PD Tch Tstg 60 ±20 200 800 200 150 −55~150 V V mA mW °C °C

Manufacture Part Number Description

Toshiba

K1062

2SK1062




Alternate Search Terms:
K1062 datasheet K1062 component K1062 integrated circuit K1062 schematic K1062 application note 1062 062 62 K106 K10 K1

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