Ordering number:ENN2746A
N-Channel Junction Silicon FET
2SK1065
High-Frequency General-Purpose Amplifier Applications
...
Ordering number:ENN2746A
N-Channel Junction Silicon FET
2SK1065
High-Frequency General-Purpose Amplifier Applications
Features
· Ultrasmall package facilitates miniaturization in end products.
· Small Crss (Crss=0.04pF typ).
0.425
Package Dimensions
unit:mm 2057A
[2SK1065]
0.3
3
0.15
0.2
0 to 0.1
2.1 1.250
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Gate-to-Drain
Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature
Symbol
VGDO IG ID PD Tj
Tstg
0.425
12 0.65 0.65
2.0
0.3 0.6 0.9
1 : Gate 2 : Drain 3 : Source SANYO : MCP
Conditions
Ratings –20 10 20 150 150
–55 to +150
Unit V mA mA
mW ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown
Voltage
V(BR)GDO IG=–10µA
Gate-to-Source Leakage Current
IGSS VGS=–0.5V, VDS=0
Zero-Gate
Voltage Drain Current
IDSS VDS=5V, VGS=0
Cutoff
Voltage
VGS(off) VDS=5V, ID=10µA
Forward Transfer Admittance
| yfs |1 | yfs |2
VDS=5V, VGS=0, f=1kHz VDS=5V, VGS=0, f=100MHz
* : The 2SK1065 is classified by IDSS as follows (unit : mA) :
IDSS rank
3
4
5
IDSS
1.2 to 3.0 2.5 to 6.0 5.0 to 12.0
(Note) Marking : T For CP package version, use the 2SK242.
Ratings min typ max
Unit
–20 V
–10 nA
1.2* 12.0* mA
–0.4 –1.3 –2.5 V
2.4 6.0
mS
2.4 6.0
mS
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extreme...
