Ordering number:EN2747
N-Channel Junction Silicon FET
2SK1066
High-Frequency General-Purpose Amplifier Applications
Ap...
Ordering number:EN2747
N-Channel Junction Silicon FET
2SK1066
High-Frequency General-Purpose Amplifier Applications
Applications
· High-frequency general-purpose amplifier. · AM tuner RF amplifier. · Low-noise amplifier.
Features
· Large yfs. · Small Crss. · Ultralow noise figure. · Ultrasmall-sized package permitting 2SK1066-
applied sets to be made smaller and slimmer.
Package Dimensions
unit:mm 2058
[2SK1066]
0.425
0.3 3
0.15 0 to 0.1
0.2
2.1 1.250
12 0.65 0.65
2.0
0.3 0.6 0.9
0.425
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source
Voltage Gate-to-Drain
Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature
Symbol
VDSX VGDS
IG ID PD Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown
Voltage
V(BR)GDS IG=–10µA, VDS=0
Gate-to-Source Leakage Current
IGSS VGS=–10V, VDS=0
Zero-Gate
Voltage Drain Current
IDSS VDS=5V, VGS=0
Cutoff
Voltage
VGS(off) VDS=5V, ID=100µA
Forward Transfer Admittance
| yfs | VDS=5V, VGS=0, f=1kHz
* : The 2SK1066 is classified by IDSS as follows (unit : mA) :
3.5 20 6.0 5.0 21 8.5 7.3 22 12.0
(Note) Marking : A
IDSS rank : 20, 21, 22 For CP package version, use the 2SK436.
1 : Source 2 : Drain 3 : Gate SANYO : MCP
Ratings 15
–15 10 20
150 150 –55 to +150
Unit V V mA mA
mW ˚C ˚C
Ratings min typ max
Unit
–15 V
–1.0 nA
3.5* 12.0* mA
–0.2 –0.5 –1.5 V
10 17
mS
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