DatasheetsPDF.com

K1093 Datasheet

Part Number K1093
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK1093
Datasheet K1093 DatasheetK1093 Datasheet (PDF)

www.DataSheet4U.com 2SK1093 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 12 3 1 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode.

  K1093   K1093






Part Number K1095
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK1095
Datasheet K1093 DatasheetK1095 Datasheet (PDF)

www.DataSheet4U.com 2SK1095 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 12 3 1 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode.

  K1093   K1093







Part Number K1094
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK1094
Datasheet K1093 DatasheetK1094 Datasheet (PDF)

www.DataSheet4U.com 2SK1094 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 12 3 1 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diod.

  K1093   K1093







2SK1093

www.DataSheet4U.com 2SK1093 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 12 3 1 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)*4 IDR Pch** Tch Tstg Ratings 60 ±20 10 0 10 20 150 –55 to +150 Unit V V A A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C http://www.Datasheet4U.com DataSheet 4 U .com www.DataSheet4U.com 2SK1093 Table 2 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(B.


2014-06-15 : STR40115    FSF05A40    FMEN-2208    CS9803GP    CS9803    FDS6679AZ    15N65C3    SPA15N65C3    SG1000    TA8207K   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)