DatasheetsPDF.com

K1094 Datasheet

Part Number K1094
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK1094
Datasheet K1094 DatasheetK1094 Datasheet (PDF)

www.DataSheet4U.com 2SK1094 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 12 3 1 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diod.

  K1094   K1094






Part Number K1095
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK1095
Datasheet K1094 DatasheetK1095 Datasheet (PDF)

www.DataSheet4U.com 2SK1095 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 12 3 1 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode.

  K1094   K1094







Part Number K1093
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK1093
Datasheet K1094 DatasheetK1093 Datasheet (PDF)

www.DataSheet4U.com 2SK1093 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 12 3 1 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode.

  K1094   K1094







2SK1094

www.DataSheet4U.com 2SK1094 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 12 3 1 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Ratings 60 ±20 15 60 15 25 150 –55 to +150 Unit V V A A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C w w .D w at e h aS U 4 et .c om Tstg www.DataSheet4U.com 2SK1094 Table 2 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS .


2014-10-08 : FM28V102A    MBR10U60CT    MBR10U60FCT    HFJ11-1G01ERL    HFJ11-1G01E-L11RL    HFJ11-1G01E-L12RL    HFJ11-1G06ERL    HFJ11-1G06E-L11RL    HFJ11-1G06E-L12RL    HFJ11-1G11ERL   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)