K1157

2SK1157, 2SK1158 Silicon N Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) G 123 REJ03G0910-0200 (Previous: ADE-208-1248) Rev.2.00 Sep 07, 2005 D 1. Gate 2. Drain (Flange) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1157, 2SK1158 Absolute Maximum Ratings Item Drain to source voltage 2SK1157 2SK1158 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Electrical Characteristics Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Item Symbol Min Drain to source breakdown voltage 2SK1157 V(BR)DSS 450 2SK1158 500 Gate to source breakdown voltage V(BR)GSS ±30 Gate to source leak current IGSS — Zero gate voltage drain 2SK1157 IDSS — current 2SK1158 Gate to source cutoff voltage VGS(off) 2.0 Static drain to source on 2SK1157 RDS(on) — state resistance 2SK1158 — Forward transfer admittance |yfs| 4.0 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time td(on) — Rise time tr — Turn-off delay time td(off) — Fall time tf — Body to drain diode forward voltage VDF — Bo...