2SK1165, 2SK1166
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High sp...
2SK1165, 2SK1166
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
1 2 3
REJ03G0914-0200 (Previous: ADE-208-1252)
Rev.2.00 Sep 07, 2005
D
G
1. Gate 2. Drain
(Flange)
3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1165, 2SK1166
Absolute Maximum Ratings
Item
Drain to source
voltage
2SK1165
2SK1166
Gate to source
voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C
Electrical Characteristics
Symbol VDSS
VGSS ID
ID(pulse)*1 IDR
Pch*2 Tch Tstg
Item
Symbol
Drain to source breakdown
voltage
2SK1165 2SK1166
V(BR)DSS
Gate to source breakdown
voltage V(BR)GSS
Gate to source leak current
IGSS
Zero gate
voltage drain 2SK1165
current
2SK1166
IDSS
Gate to source cutoff
voltage
VGS(off)
Static drain to source on 2SK1165
state resistance
2SK1166
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Body to drain diode forward
voltage VDF
Body to drain diode reverse recovery time
trr
Note: 3. Pulse test
Min 4...