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K1166 Datasheet

Part Number K1166
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N Channel MOS FET
Datasheet K1166 DatasheetK1166 Datasheet (PDF)

2SK1165, 2SK1166 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 REJ03G0914-0200 (Previous: ADE-208-1252) Rev.2.00 Sep 07, 2005 D G 1. Gate 2. Drain (Flange) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1165, 2SK1166 Absolute Maximum Ratings Item.

  K1166   K1166






Part Number K1169
Manufacturers Renesas Technology
Logo Renesas Technology
Description 2SK1169
Datasheet K1166 DatasheetK1169 Datasheet (PDF)

www.DataSheet4U.com 2SK1169, 2SK1170 Silicon N Channel MOS FET REJ03G0916-0200 (Previous: ADE-208-1254) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 S 3 Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1169, 2SK1170 www.DataSh.

  K1166   K1166







Part Number K1165
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N Channel MOS FET
Datasheet K1166 DatasheetK1165 Datasheet (PDF)

2SK1165, 2SK1166 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 REJ03G0914-0200 (Previous: ADE-208-1252) Rev.2.00 Sep 07, 2005 D G 1. Gate 2. Drain (Flange) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1165, 2SK1166 Absolute Maximum Ratings Item.

  K1166   K1166







Part Number K1164
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK1164
Datasheet K1166 DatasheetK1164 Datasheet (PDF)

2SK1163, 2SK1164 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1163, 2SK1164 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1163 2SK1164 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current .

  K1166   K1166







Part Number K1162
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N-Channel MOS FET
Datasheet K1166 DatasheetK1162 Datasheet (PDF)

2SK1161, 2SK1162 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-3P D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1161, 2SK1162 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1161 2SK1162 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain curren.

  K1166   K1166







Silicon N Channel MOS FET

2SK1165, 2SK1166 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 REJ03G0914-0200 (Previous: ADE-208-1252) Rev.2.00 Sep 07, 2005 D G 1. Gate 2. Drain (Flange) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1165, 2SK1166 Absolute Maximum Ratings Item Drain to source voltage 2SK1165 2SK1166 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Electrical Characteristics Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Item Symbol Drain to source breakdown voltage 2SK1165 2SK1166 V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current IGSS Zero gate voltage drain 2SK1165 current 2SK1166 IDSS Gate to source cutoff voltage VGS(off) Static drain to source on 2SK1165 state resistance 2SK1166 RDS(on) Forward transfer admittance |yfs| Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Body to drain diode forward voltage VDF Body to drain diode reverse recovery time trr Note: 3. Pulse test Min 4.


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