2SK1317
Silicon N Channel MOS FET
Application
High speed power switching
Features
• High breakdown voltage VDSS = 1500 ...
2SK1317
Silicon N Channel MOS FET
Application
High speed power switching
Features
High breakdown
voltage VDSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
1 2 3
G
REJ03G0929-0200 (Previous: ADE-208-1268)
Rev.2.00 Sep 07, 2005
D 1. Gate 2. Drain (Flange) 3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1317
Absolute Maximum Ratings
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol VDSS VGSS ID
ID(pulse)*1 IDR
Pch*2 Tch
Tstg
Item Drain to source breakdown
voltage Gate to source leak current Zero gate
voltage drain current Gate to source cutoff
voltage Static drain to sour...