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K1341 Datasheet

Part Number K1341
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK1341
Datasheet K1341 DatasheetK1341 Datasheet (PDF)

2SK1341 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-3P D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1341 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature.

  K1341   K1341






Part Number K1348
Manufacturers Toshiba
Logo Toshiba
Description 2SK1348
Datasheet K1341 DatasheetK1348 Datasheet (PDF)

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .

  K1341   K1341







Part Number K1342
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK1342
Datasheet K1341 DatasheetK1342 Datasheet (PDF)

2SK1342 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1342 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissi.

  K1341   K1341







Part Number K1340
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK1340
Datasheet K1341 DatasheetK1340 Datasheet (PDF)

2SK1340 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-3P D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1340 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature.

  K1341   K1341







Part Number K134
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK134
Datasheet K1341 DatasheetK134 Datasheet (PDF)

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  K1341   K1341







2SK1341

2SK1341 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-3P D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1341 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 900 ±30 6 15 6 100 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1341 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 900 Gate to source breakdown voltage V(BR)GSS ±30 Gate to source leak current I GSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance — — 2.0 — Forward transfer admittance |yfs| 2.3 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage t d(on) tr t d(off) tf VDF — — — — — Body to drain diode reverse recovery time t rr — Note: 1. Pulse test Typ Max —— —— — ±10 — 250 — 3.0 2.0 3.0 3.7 — 980 — 400 — 195 — 20 — 80 — 125 — 100 — 0.9 — 1000 — Unit V V µA.


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