K1412

Ordering number:EN4228 N-Channel Silicon MOSFET 2SK1412 Ultrahigh-Speed Switching Applications Features · Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). · Micaless package facilitating mounting. Package Dimensions unit:mm 2078B 10.0 3.2 [2SK1412] 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 0.75 1 23 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 2.55 Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 Zero-Gate Voltage Drain Current IDSS VDS=1200V, VGS=0 Gate-to-Source Leakage Current IGSS VGS=±20V, VDS=0 Cutoff Voltage VGS(off) VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=20V, ID=50mA Static Drain-to-Source ON-State Resistance RDS(on) ID=50mA, VGS=10V (Note) Be careful in handling the 2SK1412 because it has no protection diode between gate and source. 2.4 14.0 1.2 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI Ratings 1500 ±20 0.1 0.2 2.0 20 150 –55 to +150 Unit V V A A W W ˚C ˚C Ratings min typ max Unit 1500 V 100 µA ±100 nA 1.5 3.5 V 50 100 mS 140 200 Ω Continued on next page. Any and all SANYO products described ...