Ordering number:EN3469
Features
· Low ON-state resistance. · Ultrahigh-speed switching. · Converters.
N-Channel Silicon...
Ordering number:EN3469
Features
· Low ON-state resistance. · Ultrahigh-speed switching. · Converters.
N-Channel Silicon
MOSFET
2SK1466
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm 2077A
[2SK1466]
20.0 3.3
5.0
26.0 6.0
2.0 1.0
20.7
2.0 3.4
1.2
1 23
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
5.45
5.45
2.8
0.6
1 : Gate 2 : Drain 3 : Source SANYO : TO-3PBL
Ratings 900 ±30 16 32 250 3.5 150
–55 to +150
Unit V V A A W W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown
Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate
Voltage Drain Current
IDSS VDS=900V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±30V, VDS=0
Cutoff
Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=20V, ID=8A
Static Drain-to-Source ON-State Resistance
RDS(on) ID=8A, VGS=10V
(Note) Be careful in handling the 2SK1466 because it has no protection diode between gate and source.
Ratings min typ max
Unit
900 V
1.0 mA
±100 nA
2.0 3.0 V
5.0 10
S
0.6 0.8 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability,...