K1611

Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 s Applications 16.7±0.3 7.5±0.2 q High-speed switching (switching power supply, AC adaptor) q For high-frequency power amplification φ3.1±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 800 ±30 ±3 ±6 20 50 2 150 −55 to +150 Unit V V A A mJ 4.0 1.4±0.1 1.3±0.2 14.0±0.5 Solder Dip 0.5 +0.2 –0.1 0.8±0.1 2.54±0.25 5.08±0.5 1 2 Avalanche energy capacity www.DataSheet4U.com Allowable power TC = 25°C dissipation Channel temperature Storage temperature * Ta = 25°C W °C °C 1: Gate 2: Drain 3: Source EIAJ: SC-67 TO-220 Full Pack Package (a) 3 Single pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Avalanche energy capacity Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS EAS* Vth RDS(on) | Yfs | Coss ton tf td(off) Conditions VDS = 640V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 L = 4.5mH, ID = 3A, VDD = 50V VDS = 25V, ID = 1mA VGS = 10V, ID = 2A VDS = 25V, ID = 2A VDS = 20V, VGS = 0, f = 1MHz 1.5 800 20 1 3.2 2.4 730 90 40 VGS = 10V, ID = 2A ...