Ordering number:EN3823
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
N-Channel Silico...
Ordering number:EN3823
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-
voltage drive.
N-Channel Silicon
MOSFET
2SK1728
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2062A
[2SK1728]
4.5 1.6
1.5
1.0 2.5 4.25max
0.4 0.5
32 1.5
1
3.0
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C Mounted on a ceramic board (250mm2×0.8mm)
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown
Voltage Zero-Gate
Voltage Drain Current Gate-to-Source Leakage Current Cutoff
Voltage Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Symbol
Conditions
V(BR)DSS IDSS IGSS
VGS(off) | yfs |
RDS(on) RDS(on)
ID=1mA, VGS=0 VDS=100V, VGS=0 VGS=±12V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=500mA ID=500mA, VGS=10V ID=500mA, VGS=4V
0.4
1 : Gate 2 : Drain 3 : Source SANYO : PCP
Ratings 100 ±15 1 4 3.5 1.3 150
–55 to +150
Unit V V A A W W ˚C ˚C
Ratings min typ max
Unit
100 V
100 µA
±10 µA
1.0 2.0 V
0.6 1.0
S
2.7 3.5 Ω
3.2 4.2 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s contr...