DatasheetsPDF.com

K1808 Datasheet

Part Number K1808
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK1808
Datasheet K1808 DatasheetK1808 Datasheet (PDF)

2SK1808 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SK1808 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage t.

  K1808   K1808






Part Number K1807
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK1807
Datasheet K1808 DatasheetK1807 Datasheet (PDF)

2SK1807 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1807 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dis.

  K1808   K1808







Part Number K1805
Manufacturers Toshiba
Logo Toshiba
Description 2SK1805
Datasheet K1808 DatasheetK1805 Datasheet (PDF)

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .

  K1808   K1808







Part Number K1803
Manufacturers Panasonic
Logo Panasonic
Description Silicon N-Channel MOSFET
Datasheet K1808 DatasheetK1803 Datasheet (PDF)

Power F-MOS FETs 2SK1803 Silicon N-Channel Power F-MOS FET s Features q Avalanche capacity guaranteed: EAS > 60mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 80ns q No secondary breakdown s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply s Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Ratings Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Avalanch.

  K1808   K1808







Part Number K1800y
Manufacturers Littelfuse
Logo Littelfuse
Description Thyristors
Datasheet K1808 DatasheetK1800y Datasheet (PDF)

Kxxxzy SIDAC Teccor® brand Thyristors Standard Bidirectional SIDACs RoHS Schematic Symbol Description The SIDAC is a silicon bilateral voltage triggered switch. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or drops below the minimum holding current of the device. SIDACs feature glass-passivated junctions to ensure a rugged a.

  K1808   K1808







2SK1808

2SK1808 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SK1808 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 900 ±30 4 10 4 35 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1808 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 900 Gate to source breakdown voltage V(BR)GSS ±30 Gate to source leak current IGSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance — — 2.0 — Forward transfer admittance |yfs| 1.7 Typ — — — — — 3.0 2.7 Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr — — — — — — — — — 740 305 150 15 60 100 80 0.9 800 Max Unit —V —V ±10 µA 250 µA 3.0 V 4.0 Ω —S — pF — pF — pF — ns — ns — ns — n.


2014-12-29 : UMA0G100MCD    UMA0G100MDD    UMA0G101MCD    UMA0G101MDD    UMA0G220MCD    UMA0G220MDD    UMA0G221MCD    UMA0G221MDD    UMA0G330MCD    UMA0G330MDD   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)