TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK1875
High Frequency Amplifier Applications AM High Fr...
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK1875
High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
2SK1875
Unit: mm
· High |Yfs|: |Yfs| = 25 mS (typ.) · Low Ciss: Ciss = 7.5 pF (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain
voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
-20 10 100 125 -55~125
Unit
V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-2E1B
Weight: 0.006 g (typ.)
Characteristics
Symbol
Test Condition
Gate leakage current Gate-drain breakdown
voltage
Drain current
Gate-source cut-off
voltage Forward transfer admittance Input capacitance Reverse transfer capacitance
IGSS
VGS = -15 V, VDS = 0 V
V (BR) GDS VDS = 0 V, IG = -100 mA
IDSS (Note)
VDS = 5 V, VGS = 0 V
VGS (OFF) ïYfsï Ciss Crss
VDS = 5 V, ID = 1 mA VDS = 5 V, VGS = 0 V, f = 1 kHz VDS = 5 V, VGS = 0 V, f = 1 MHz VDG = 5 V, ID = 0 A, f = 1 MHz
Note: IDSS classification GR: 6~12 mA, BL: 10~20 mA, V: 16~32 mA (G) (L) (V) ( ).......IDSS rank marking
Min Typ. Max Unit
¾ ¾ -1.0 nA
-20 ¾
¾
V
6 ¾ 32 mA
¾
¾ -2.5
V
15 25 ¾ mS
¾ 7.5 10 pF
¾2
3 pF
1 2003-03-27
Marking
2SK1875
2 2003-03-27
2SK1875
3 2003-03-27
2SK1875
4 2003-03-27
2SK1875
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. N...
