K1S64161CC

www.DataSheet4U.com K1S64161CC Document Title 4Mx16 bit Page Mode Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 Initial Draft - Design Target Revised - Filled out ICC2 and ISB1 value ICC2(max) : 40mA ISB1(max,< 40°C) : 120µA ISB1(max,< 85°C) : 180µA - Changed tOH from min.5ns into min.3ns - Added tCSHP(CS High Pulse Width) as min.10ns - Added tWHP(WE High Pulse Width) as min.5ns Finalize - Added Lead Free Product Draft Date April 12, 2004 Remark Advanced 0.1 November 3, 2004 Preliminary 1.0 April 06, 2005 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 1.0 April 2005 www.DataSheet4U.com K1S64161CC 4M x 16 bit Page Mode Uni-Transistor CMOS RAM FEATURES UtRAM GENERAL DESCRIPTION The K1S64161CC is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports 4 page read operation and Industrial temperature range. The device supports dual chip selection for user interface. The device also supports internal Temperature Compensated Self Refresh mode for the standby power saving at room temperature range. Process Technology: CMOS Organization: 4M x16 bit Power Supply Voltage: 2.7~3.1V Three State Outputs Compatible with Low P...