2SK2003-01MR
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching Low on-resistance No secondary breakdown Low d...
2SK2003-01MR
N-CHANNEL SILICON POWER
MOSFET
Features
High speed switching Low on-resistance No secondary breakdown Low driving power High
voltage www.DataSheet4U.com VGS=±30V Guarantee Avalanche-proof
FUJI POWER
MOSFET
FAP-IIA SERIES
Outline Drawings
TO-220F15
Applications
Switching regulators UPS DC-DC converters General purpose power amplifier
2.54
3. Source
JEDEC EIAJ
SC-67
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
Item Drain-source
voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak
voltage Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] IDR VGS PD Tch Tstg Rating 600 4 16 4 ±30 40 +150 -55 to +150 Unit V A A A V W °C °C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown
voltage Gate threshold
voltage Zero gate
voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Avalanche capability Diode forward on-
voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=600V VGS=0V VGS=±30V VDS=0V ID=2A...
