K2085

2SK2085 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Outline TO-92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SK2085 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 100 ±20 1.0 4.0 1.0 0.9 150 –55 to +150 Unit V V A A A W °C °C 2 2SK2085 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 100 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 0.7 — — — — — — — — — Typ — — — — — 0.6 0.75 1.2 130 50 12 7 6.5 55 20 0.85 80 Max — — ±10 100 2.0 0.9 1.35 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 1.0 A, VGS = 0 I F = 1.0 A, VGS = 0, diF / dt = 50 A / µs Test conditi...