TK20J60Uwww.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS )
TK20J60U
Switching Regu...
TK20J60Uwww.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS )
TK20J60U
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source
voltage
Gate-source
voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
(Note 3)
Repetitive avalanche energy
Channel temperature
Storage temperature range
Symbol
VDSS VGSS
ID
IDP
PD
EAS
IAR EAR Tch Tstg
Rating
600 ±30 20
40
190
144
20 19 150 −55 to 150
Unit V V
A
W mJ A mJ °C °C
15.9 MAX.
Unit: mm
3.2 ± 0.2
2.0 1.0 9.0 4.5
20.0 ± 0.3
3.3 MAX. 2.0
20.5 ± 0.5
2.0 ± 0.3
1.0
0.3 0.25
5.45 ± 0.2
5.45 ± 0.2
4.8 MAX.
1.8 MAX. 0.3
0.6 0.1
2.8
123
1. Gate 2. Drain(heat sink) 3. Source
JEDEC
⎯
JEITA
SC-65
TOSHIBA
2-16C1B
Weight : 4.6 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon r...
