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K20T60

Infineon

IGBT

IKP20N60T, IKB20N60T TrenchStop Series IKW20N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft...


Infineon

K20T60

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Description
IKP20N60T, IKB20N60T TrenchStop Series IKW20N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge P-TO-220-3-1 (TO-220AB) Very soft, fast recovery anti-parallel EmCon HE diode Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E P-TO-247-3-1 (TO-220AC) P-TO-263-3-2 (D²-PAK) (TO-263AB) Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code IKP20N60T 600V 20A 1.5V 175°C K20T60 IKB20N60T 600V 20A 1.5V 175°C K20T60 IKW20N60T 600V 20A 1.5V 175°C K20T60 Maximum Ratings Parameter Symbol Collector-emitter voltage DC collector current, limited by Tjmax TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) Diode forward current, limited by Tjmax TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time1) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction temperature Storag...




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