SHINDENGEN
VX-2 Series Power MOSFET
N-Channel Enhancement type
2SK2196
(F20W50VX2)
OUTLINE DIMENSIONS
Cassee :: ME-Tp...
SHINDENGEN
VX-2 Series Power
MOSFET
N-Channel Enhancement type
2SK2196
(F20W50VX2)
OUTLINE DIMENSIONS
Cassee :: ME-TpOa-c3kP
(Unit : mm)
500V 20A
FEATURES
●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.
●The static Rds(on) is small. ●The switching time is fast.
APPLICATION
●Switching power supply of AC 100V input ●High
voltage power supply ●Inverter
RATINGS
●Absolute Maximum Ratings Item
Storage Temperature Channel Temperature Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current(DC) Continuous Drain Current(Peak) Continuous Source Current(DC) Total Power Dissipation Single Pulse Avalanche Current Mounting Torque
(Tc = 25℃) Symbol
Tstg Tch VDSS VGSS ID IDP IS PT IAS TOR
Conditions
Tch = 25℃ ( Recommended torque : 0.5 N・m )
Ratings
-55~150 150 500 ±30 20 60 20 125 20 0.8
Unit ℃
V
A
W A N・m
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
VX-2 Series Power
MOSFET
2SK2196( F20W50VX2 )
●Electrical Characteristics Tc = 25℃
Item
Symbol
Conditions
Drain-Source Breakdown
Voltage
V(BR)DSS ID = 1mA, VGS = 0V
Zero Gate
Voltage Drain Current
IDSS VDS = 500V, VGS = 0V
Gate-Source Leakage Current
IGSS VGS = ±30V, VDS = 0V
Forward Transconductance
gfs ID = 10A, VDS = 10V
Static Drain-Source On-state Resistance RDS(ON) ID = 10A, VGS = 10V
Gate Threshold
Voltage
VTH ID = 1mA, VDS = 10V
Source-Drain Diode Forwade
Voltage
VSD IS = 10A, VGS = 0V
Thermal Resistance
θjc junction to case
Total Gate Charge
Qg...