K2196

SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2196 (F20W50VX2) OUTLINE DIMENSIONS Cassee :: ME-TpOa-c3kP (Unit : mm) 500V 20A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small. ●The switching time is fast. APPLICATION ●Switching power supply of AC 100V input ●High voltage power supply ●Inverter RATINGS ●Absolute Maximum Ratings Item Storage Temperature Channel Temperature Drain-Source Voltage Gate-Source Voltage Continuous Drain Current（DC） Continuous Drain Current（Peak) Continuous Source Current（DC） Total Power Dissipation Single Pulse Avalanche Current Mounting Torque （Tc = 25℃） Symbol Tstg Tch VDSS VGSS ID IDP IS PT IAS ＴＯＲ Conditions Tch = 25℃ （ Recommended torque ： 0.5 N･m ） Ratings -55～150 150 500 ±30 20 60 20 125 20 0.8 Unit ℃ V A W A N・m Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd VX-2 Series Power MOSFET 2SK2196( F20W50VX2 ) ●Electrical Characteristics Tc = 25℃ Item Symbol Conditions Drain-Source Breakdown Voltage V(BR)DSS ID = 1mA, VGS = 0V Zero Gate Voltage Drain Current IDSS VDS = 500V, VGS = 0V Gate-Source Leakage Current IGSS VGS = ±30V, VDS = 0V Forward Tranｓconductance gfs ID = 10A, VDS = 10V Static Drain-Source On-ｓtate Resistance RDS(ON) ID = 10A, VGS = 10V Gate Threshold Voltage VTH ID = 1mA, VDS = 10V Source-Drain Diode Forwade Voltage VSD IS = 10A, VGS = 0V Theｒmal Resistance θjc junction to case Total Gate Charge Qg...