DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2367/2SK2368
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
...
DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2367/2SK2368
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor designed for high
voltage switching applications. PACKAGE DIMENSIONS (in millimeter)
1.0
15.7 MAX. 4 3.2±0.2 4.7 MAX. 1.5
FEATURES
2SK2368: RDS (on) = 0.6 Ω (VGS = 10 V, ID = 8.0 A)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source
Voltage (2SK2367/2SK2368) Gate to Source
Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID (DC) ID (pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ± 30 ± 15 ± 60 120 3.0 150 15 161 V V A A W W ˚C A mJ
19 MIN. 3.0±0.2
Low Ciss Ciss = 1 600 pF TYP. High Avalanche Capability Ratings
1
2
3
2.2±0.2 5.45
1.0±0.2 5.45
4.5±0.2
2SK2367: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 8.0 A)
20.0±0.2 6.0
0.6±0.1
2.8±0.1
1. Gate 2. Drain 3. Source 4. Fin (Drain)
MP-88
Drain
–55 to +150 ˚C
Body Diode Gate
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
Source
Document No. TC-2506 (O. D. No. TC-8065) Date Published December 1994 P Printed in Japan
©
7.0
Low On-Resistance
1995 1994
Free Datasheet http://www.datasheet4u.net/
2SK2367/2SK2368
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC Drain to Source On-Resistance SYMBOL RDS (on) MIN. TYP. 0.4 0.5 Ga...