2SK2524-01MR
FAP-II Series
> Features
- High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving ...
2SK2524-01MR
FAP-II Series
> Features
- High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High
Voltage - VGS = ± 30V Guarantee - Avalanche Proof
> Applications
- Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier
N-channel MOS-FET
450V 1Ω 9A 40W
> Outline Drawing
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-
Voltage
V DS
450
Drain-Gate-
Voltage(RGS=20KΩ)
V DGR
450
Continous Drain Current
ID 9
Pulsed Drain Current
I D(puls)
36
Gate-Source-
Voltage
V GS
±30
Max. Power Dissipation
P D 40
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit V V A A V W °C °C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-
Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold
Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate
Voltage Drain Current
I DSS
VDS=450V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=4,5A
VGS=10V
Forward Transconductance
g fs
ID=4,5A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=300V
t r ID=9A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
t f RGS=10 Ω
Avalanche Capabi...