SHINDENGEN
HVX-2 Series Power MOSFET
N-Channel Enhancement type
2SK2672
( F5W90HVX2 )
OUTLINE DIMENSIONS
Case : MTO-3...
SHINDENGEN
HVX-2 Series Power
MOSFET
N-Channel Enhancement type
2SK2672
( F5W90HVX2 )
OUTLINE DIMENSIONS
Case : MTO-3P
(Unit : mm)
900V 5A
FEATURES
●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.
●The static Rds(on) is small. ●The switching time is fast. ●Avalanche resistance guaranteed.
APPLICATION
●Switching power supply of AC 240V input ●High
voltage power supply ●Inverter
RATINGS
●Absolute Maximum Ratings Item
Storage Temperature Channel Temperature Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current(DC) Continuous Drain Current(Peak) Continuous Source Current(DC) Total Power Dissipation Repetitive Avalanche Current Single Avalanche Energy Repetitive Avalanche Energy Mounting Torque
(Tc = 25℃) Symbol
Tstg Tch VDSS VGSS ID IDP IS PT IAR EAS EAR TOR
Conditions
Pulse width≦10μs, Duty cycle≦1/100
Tch = 150℃ Tch = 25℃ Tch = 25℃ ( Recommended torque :0.5 N・m )
Ratings
-55~150 150 900 ±30 5 10 5 80 5 100 10 0.8
Unit ℃
V
A
W A mJ
N・m
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
HVX-2 Series Power
MOSFET
2SK2672 ( F5W90HVX2 )
●Electrical Characteristics Tc = 25℃
Item
Symbol
Conditions
Drain-Source Breakdown
Voltage
V(BR)DSS ID = 1mA, VGS = 0V
Zero Gate
Voltage Drain Current
IDSS VDS = 900V, VGS = 0V
Gate-Source Leakage Current
IGSS VGS = ±30V, VDS = 0V
Forward Transconductance
gfs ID = 2.5A, VDS = 10V
Static Drain-Source On-state Resistance RDS(ON) ID = 2.5A, VGS = 10V
Gate Threshold
Voltage
...