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K2719 Datasheet

Part Number K2719
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOS Type Field Effect Transistor
Datasheet K2719 DatasheetK2719 Datasheet (PDF)

2SK2719 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) 2SK2719 Chopper Regulator, DC-DC Converter and Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics S Drain-source voltage Drain-gate voltage (RGS = 20.

  K2719   K2719






Part Number K2718
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SK2718
Datasheet K2719 DatasheetK2718 Datasheet (PDF)

2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2718 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 5.6 Ω (typ.) : |Yfs| = 2.0 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 720 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source vo.

  K2719   K2719







Part Number K2717
Manufacturers Toshiba
Logo Toshiba
Description Silicon N Channel MOS Type Field Effect Transistor
Datasheet K2719 DatasheetK2717 Datasheet (PDF)

2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2717 DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.4 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 720 V) l Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source vo.

  K2719   K2719







Part Number K2715
Manufacturers Rohm
Logo Rohm
Description 2SK2715
Datasheet K2719 DatasheetK2715 Datasheet (PDF)

Transistors Switching (500V, 2A) 2SK2715 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 142 Free Datasheet http://www.datasheet-pdf.com/ Transistors FElectrical characteristics (Ta = 25_C) 2SK2715 FE.

  K2719   K2719







Part Number K2711
Manufacturers Rohm
Logo Rohm
Description 2SK2711
Datasheet K2719 DatasheetK2711 Datasheet (PDF)

www.DataSheet.co.kr Transistors Switching (250V, 16A) 2SK2711 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 130 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Transistors FElectrica.

  K2719   K2719







N-Channel MOS Type Field Effect Transistor

2SK2719 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) 2SK2719 Chopper Regulator, DC-DC Converter and Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics S Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) V Gate-source voltage DC Drain current (Note 1) Pulse (Note 1) ymbol VDSS DGR Rating 900 900 ±30 3 Unit V V V 1. Gate 2. Drain (heat sink) 3. Source VGSS ID IDP PD EAS IAR (Note 3) EAR Tch Tstg A 9 125 295 3 12.5 150 −55 to 150 W mJ A mJ °C °C JEDEC JEITA TOSHIBA ― SC-65 2-16C1B Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual re.


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