2SK2733
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2733
Chopper Regulator, DC−DC Converte...
2SK2733
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2733
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 8.0 Ω (typ.)
l High forward transfer admittance : |Yfs| = 0.9 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 720 V)
l Enhancement−mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source
voltage
Drain−gate
voltage (RGS = 20 kΩ) Gate−source
voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
Rating
900 900 ±30
1 3 60
324
1 6.0 150 −55~150
Unit V V V
A
W mJ A mJ °C °C
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
2-10P1B
Weight: 2.0 g (typ.)
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c) Rth (ch−a)
2.08 83.3
°C / W °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 594 mH, RG = 25 Ω, IAR = 1 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-09-02
Electrical Characteristic...