K2980

2SK2980 Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) 2.5 V gate drive devices. Small package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 G 2 Note: Marking is “ZZ–” REJ03G1061-0400 (Previous: ADE-208-571B) Rev.4.00 Sep 07, 2005 D 1. Source 2. Gate 3. Drain S Rev.4.00 Sep 07, 2005 page 1 of 6 2SK2980 Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 30 Gate to source voltage VGSS +12 –10 Drain current Drain peak current Channel dissipation ID 1.0 ID(pulse)Note1 4 Pch Note2 0.8 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at when using alumina ceramic board (12.5 x 20 x 0.7 mm) (Ta = 25°C) Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 Gate to source breakdown voltage V(BR)GSS +12 –10 Zero gate voltage drain current IDSS — Gate to source leak current IGSS — Gate to source cutoff voltage VGS(off) 0.5 Static drain to source on state resistance RDS(on) — Static drain to source on state resistance RDS(on) — Forward transfer admittance |yfs| 1.2 Input capacitance Ciss — Output capacitance Coss — — — — — — — — 1.0 — ±5.0 — 1.5 0.2 0.28 0.3 0.5 2.0 — 155 — 75 — V ID = 100 µA, VGS = 0 V...