K3484

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3484 SWITCHING N-CHANNEL POWER MOS FET www.DataSheet4U.com DESCRIPTION The 2SK3484 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3484 2SK3484-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEATURES Low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 8 A) Low Ciss: Ciss = 900 pF TYP. Built-in gate protection diode TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 100 ±20 ±16 ±22 30 1.0 150 –55 to +150 10 10 V V A A W W °C °C A mJ (TO-252) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 4.17 125 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales repre...