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K3498 Datasheet

Part Number K3498
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SK3498
Datasheet K3498 DatasheetK3498 Datasheet (PDF)

2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) High forward transfer admittance: Yfs = 0.6 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 400 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source v.

  K3498   K3498






Part Number K3497
Manufacturers Toshiba
Logo Toshiba
Description 2SK3497
Datasheet K3498 DatasheetK3497 Datasheet (PDF)

www.DataSheet4U.com 2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3497 High Power Amplifier Application Unit: mm High breakdown voltage: VDSS = 180V Complementary to 2SJ618 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 180 Gate−source voltage VGSS ±12 Drain current DC (Note ) Pulse (Note ) ID IDP 10 30 Drain power dissipation (Tc = 25°C) PD 130 Channel temperature Tch 150 Storage temperature rang.

  K3498   K3498







Part Number K3491
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 2SK3491
Datasheet K3498 DatasheetK3491 Datasheet (PDF)

Ordering number : ENN6959 Features • Low ON-resistance. • Low Qg. 2SK3491 N-Channel Silicon MOSFET 2SK3491 Ultrahigh-Speed Switching Applications Package Dimensions unit : mm 2083B [2SK3491] 6.5 5.0 2.3 4 0.5 5.5 1.5 7.0 0.85 0.7 0.6 12 3 2.3 2.3 0.8 1.6 7.5 1.2 0.5 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP Package Dimensions unit : mm 2092B [2SK3491] 6.5 2.3 5.0 0.5 4 0.8 5.5 1.5 2.5 7.0 1.2 0.85 1 0.6 2 3 2.3 2.3 0.5 1.2 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain.

  K3498   K3498







Part Number K349
Manufacturers Hitachi
Logo Hitachi
Description Silicon N-Channel MOSFET
Datasheet K3498 DatasheetK349 Datasheet (PDF)

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  K3498   K3498







2SK3498

2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) High forward transfer admittance: Yfs = 0.6 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 400 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 400 400 ±30 1 3 20 113 1 2 150 −55 to150 Unit V V V A W mJ A mJ °C °C Pulse (Note 1) JEDEC JEITA TOSHIBA ― SC-64 2-7B1B Weight: 0.36 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit °C/W °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 183 mH, RG = 25 Ω, IAR = 1 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. JEDEC JEITA TOSHIBA ― ― 2-7J1B Weight: 0.36 g (typ.) 1 2002-02-27 Free Datasheet http://www.datashee.


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