2SK3669
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII)
2SK3669
Switching Regulator, Audio Ampli...
2SK3669
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII)
2SK3669
Switching Regulator, Audio Amplifier and Motor Drive Applications
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) High forward transfer admittance: |Yfs| = 6 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) www.DataSheet4U.cEonmhancement mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source
voltage
Drain-gate
voltage (RGS = 20 kΩ) Gate-source
voltage
DC (Note 1)
Drain current
Pulse (tw ≤ 10 ms) (Note 1)
Pulse (tw ≤ 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP
IDP
PD EAS IAR EAR Tch Tstg
100 100 ±20 10 15
28 20 280 10 2 150 −55 to 150
V V V
A
W mJ A mJ °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating...