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K4091 Datasheet

Part Number K4091
Manufacturers Renesas
Logo Renesas
Description MOS FIELD EFFECT TRANSISTOR
Datasheet K4091 DatasheetK4091 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4091 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4091 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 13.0 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low gate to drain charge QGD = 2.2 nC TYP. (V.

  K4091   K4091






Part Number K4098LS
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 2SK4098LS
Datasheet K4091 DatasheetK4098LS Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENA0776 2SK4098LS SANYO Semiconductors DATA SHEET 2SK4098LS N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Dra.

  K4091   K4091







Part Number K4097
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 2SK4097LS
Datasheet K4091 DatasheetK4097 Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENA0775 2SK4097LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4097LS Features • • • • General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Dr.

  K4091   K4091







Part Number K4096LS
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 2SK4096LS
Datasheet K4091 DatasheetK4096LS Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENA0774 2SK4096LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4096LS Features • • • • General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Dr.

  K4091   K4091







Part Number K4093
Manufacturers Renesas
Logo Renesas
Description Silicon N Channel MOS FET
Datasheet K4091 DatasheetK4093 Datasheet (PDF)

2SK4093 Silicon N Channel MOS FET High Speed Power Switching Features • Capable of 2.5V gate drive • Low drive current • Low on-resistance Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) G 321 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage tempe.

  K4091   K4091







Part Number K4092
Manufacturers NEC
Logo NEC
Description 2SK4092
Datasheet K4091 DatasheetK4092 Datasheet (PDF)

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4092 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4092 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 10 A) • Low gate charge QG = 50 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 21 A) • Gate voltage rating: ±30 V • Av.

  K4091   K4091







MOS FIELD EFFECT TRANSISTOR

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4091 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4091 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 13.0 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low gate to drain charge QGD = 2.2 nC TYP. (VDD = 15 V, ID = 30 A) • 4.5 V drive available • Avalanche capability ratings ORDERING INFORMATION PART NUMBER 2SK4091(1)-S27-AY Note 2SK4091-ZK-E1-AY Note 2SK4091-ZK-E2-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 75 p/tube Tape 2500 p/reel Note Pb-free (This product does not contain Pb in external electrode). PACKAGE TO-251 (MP-3-b) typ. 0.34 g TO-252 (MP-3ZK) typ. 0.27 g ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT1 Total Power Dissipation (TA = 25°C) PT2 Channel Temperature Tch Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Tstg IAS EAS 30 ±20 ±30 ±110 21 1.0 150 −55 to +150 18 32.4 V V A A W W °C °C A mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 0.1 mH (TO-251) (TO-252) The .


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