| Part Number | K4S161622H |
| Manufacturer | Samsung semiconductor |
| Title | 16Mb H-die SDRAM Specification |
| Description | The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high... |
| Features |
• • • • 3.3V power supply LVTTL compatible with multiplexed address two banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock B... |
| Datasheet | K4S161622H pdf datasheet |
| Part Number | K4S161622E |
| Manufacturer | Samsung semiconductor |
| Title | 1M x 16 SDRAM |
| Description | The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high. |
| Features |
• • • • 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock . |
| Datasheet | K4S161622E pdf datasheet |
| Part Number | K4S161622D |
| Manufacturer | Samsung semiconductor |
| Title | 512K x 16Bit x 2 Banks Synchronous DRAM |
| Description | The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high. |
| Features |
• • • • 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock . |
| Datasheet | K4S161622D pdf datasheet |
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