| Part Number | K4S280432C |
| Manufacturer | Samsung semiconductor |
| Title | 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| Description | The K4S280432C is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s hi... |
| Features |
• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 ) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system ... |
| Datasheet | K4S280432C pdf datasheet |
| Part Number | K4S280432M |
| Manufacturer | Samsung semiconductor |
| Title | 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| Description | The K4S280432M is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s hi. |
| Features |
• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the sys. |
| Datasheet | K4S280432M pdf datasheet |
| Part Number | K4S280432I |
| Manufacturer | Samsung Semiconductor |
| Title | (K4S28xx32I) JEDEC standard 3.3V power supply LVTTL compatible |
| Description | The K4S280432I / K4S280832I / K4S281632I is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4. |
| Features |
• • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of t. |
| Datasheet | K4S280432I pdf datasheet |
| Part Number | K4S280432F-UL75 |
| Manufacturer | Samsung semiconductor |
| Title | 128Mb F-die SDRAM |
| Description | The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4. |
| Features |
• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of t. |
| Datasheet | K4S280432F-UL75 pdf datasheet |
| Part Number | K4S280432F-UC75 |
| Manufacturer | Samsung semiconductor |
| Title | 128Mb F-die SDRAM |
| Description | The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4. |
| Features |
• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of t. |
| Datasheet | K4S280432F-UC75 pdf datasheet |
| Part Number | K4S280432F-TL75 |
| Manufacturer | Samsung semiconductor |
| Title | 128Mb F-die SDRAM Specification |
| Description | The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4. |
| Features |
• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of t. |
| Datasheet | K4S280432F-TL75 pdf datasheet |
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