K4S281632D-TC

Part Number	K4S281632D-TC
Manufacturer	Samsung semiconductor
Title	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Description	The K4S281632D is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s h...
Features	• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of t...
Datasheet	K4S281632D-TC pdf datasheet

K4S281632D-TL75

Part Number	K4S281632D-TL75
Manufacturer	Samsung semiconductor
Title	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Description	The K4S281632D is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s h.
Features	• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of t.
Datasheet	K4S281632D-TL75 pdf datasheet

Part Number	K4S281632D-TC75
Manufacturer	Samsung semiconductor
Title	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Description	The K4S281632D is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s h.
Features	• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of t.
Datasheet	K4S281632D-TC75 pdf datasheet