| Part Number | K4S640832E-TL1H |
| Manufacturer | Samsung semiconductor |
| Title | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
| Description | The K4S640832E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG′s hig... |
| Features |
• • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the... |
| Datasheet | K4S640832E-TL1H pdf datasheet |
| Part Number | K4S640832E-TL1L |
| Manufacturer | Samsung semiconductor |
| Title | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
| Description | The K4S640832E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG′s hig. |
| Features |
• • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the. |
| Datasheet | K4S640832E-TL1L pdf datasheet |
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