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K4S641633H-RBE Datasheet

Part Number K4S641633H-RBE
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Datasheet K4S641633H-RBE DatasheetK4S641633H-RBE Datasheet (PDF)

K4S641633H - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Functio.

  K4S641633H-RBE   K4S641633H-RBE






1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S641633H - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • • • • 64ms refresh period (4K cycle). Commercial Temperature Operation (-25°C ~ 70°C). Extended Temperature Operation (-25°C ~ 85°C). 54Balls FBGA with 0.8mm ball pitch ( -RXXX : Leaded, -BXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications. ORDERING INFORMATION Part No. K4S641633H-R(B)E/N/G/C/L/F75 K4S641633H-R(B)E/N/G/C/L/F1H K4S641633H-R(B.


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