K4X51163PC

www.DataSheet4U.com K4X51163PC - L(F)E/G 32M x16 Mobile-DDR SDRAM FEATURES Mobile-DDR SDRAM 1.8V power supply, 1.8V I/O power Double-data-rate architecture; two data transfers per clock cycle Bidirectional data strobe(DQS) Four banks operation 1 /CS 1 CKE Differential clock inputs(CK and CK) MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16 ) - Burst Type (Sequential & Interleave) - Partial Self Refresh Type ( Full, 1/2, 1/4 Array ) - Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 ) Internal Temperature Compensated Self Refresh Deep Power Down Mode All inputs except data & DM are sampled at the positive going edge of the system clock(CK). Data I/O transactions on both edges of data strobe, DM for masking. Edge aligned data output, center aligned data input. No DLL; CK to DQS is not synchronized. LDM, UDM for write masking only. Auto refresh duty cycle - 7.8us for -25 to 85 °C Operating Frequency DDR266 Speed @CL2*1 Speed @CL3*1 Note : 1. CAS Latency DDR222 66Mhz 111Mhz 83Mhz 133Mhz Address configuration Organization 32M x16 - DM is internally loaded to match DQ and DQS identically. Bank BA0,BA1 Row A0 - A12 Column A0 - A9 Ordering Information Part No. K4X51163PC-L(F)E/GC3 K4X51163PC-L(F)E/GCA Max Freq. 133MHz(CL=3),83MHz(CL=2) 111MHz(CL=3),66MHz(CL=2) Interface LVCMOS Package 60FBGA Pb (Pb Free) - L(F)E : 60FBGA Pb(Pb Free), Normal Power, Extended Temperature(-25 °C ~ 85 °C) - L(F)G : 60FB...