TK5A65D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
TK5A65D
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.6 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics S Drain-source voltage Gate-source voltage Drain current DC (Note Pulse (Note 1) 1.
TK5A65D
TK5A65D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
TK5A65D
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.6 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics S Drain-source voltage Gate-source voltage Drain current DC (Note Pulse (Note 1) 1) ymbol VDSS VGSS ID IDP PD EAS 180 IAR 5 EAR 4.0 Tch 150 Tstg −55 to 150 Rating 650 ±30 5 20 40 Unit V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA 2-10U Weight: 1.7 g (typ.)
⎯ SC-67 1B
Note: Using c ontinuously under h eavy l oads ( e.g. the a pplication of hig h te mperature/current/voltage a nd th e significant change in temp erature, etc.) may cause this pro duct to decrea se in the relia bility significantly even if the operatin g conditio ns (i.e . operating temperatur e/current/voltage, etc.) are within the abs olute m aximum ratings. Pl ease desi gn th e appropriate rel iability up on r eviewing t he Toshiba Semi conductor Re liability Handbook (“H andling Preca utions”/“Derating C oncept a nd Meth ods’’) and individual rel iability d ata (i.e. reliability test report and estima.