K5D5657DCM-F015

K5D5657DCM-F015 Preliminary MCP MEMORY MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM -1- Revision 0.0 June 2003 K5D5657DCM-F015 Document Title Preliminary MCP MEMORY Multi-Chip Package MEMORY 256M Bit(32Mx8) Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM Revision History Revision No. History 0.0 Initial issue. (256Mb NAND C-Die_Ver 1.0) (256Mb MSDRAM E‘-Die_Ver 0.5) Draft Date June 23, 2003 Remark Preliminary Note : For more detailed features and specifications including FAQ, please refer to Samsung’s web site. http://samsungelectronics.com/semiconductors/products/products_index.html The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. -2Revision 0.0 June 2003 K5D5657DCM-F015 Preliminary MCP MEMORY Multi-Chip Package MEMORY 256M Bit (32Mx8) Nand Flash / 256M Bit (4Mx16x4Banks) Mobile SDRAM FEATURES Operating Temperature : -25°C ~ 85°C Package : 107-ball FBGA Type - 10.5x13mm, 0.8mm pitch Power Supply Voltage : 2.4~2.9V Organization - Memory Cell Array : (32M + 1024K)bit x 8bit - Data Register : (512 + 16)bit x 8bit Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte Page Read Operation - Page Size : (512 + 16)Byte - Random ...