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K5L5628JT(B)M
Document Title
Multi-Chip Package MEMORY
Preliminary Preliminary MCP MEMORY
256M Bi...
www.DataSheet4U.com
K5L5628JT(B)M
Document Title
Multi-Chip Package MEMORY
Preliminary Preliminary MCP MEMORY
256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
Revision History
Revision No. History
0.0 Initial Draft (256M NOR Flash A-die_rev0.3) (128M UtRAM M-die_rev0.1) Finalize
....... rev 1.0 - Deleted Synchronous Burst Read and Asynchronous Write Mode
Draft Date
August 12, 2004
Remark
Preliminary
1.0
November 10, 2004 Final
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s web site. http://samsungelectronics.com/semiconductors/products/products_index.html The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. 1
Revision 1.0 November 2004
www.DataSheet4U.com
K5L5628JT(B)M
Multi-Chip Package MEMORY
Preliminary Preliminary MCP MEMORY
256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
FEATURES
Operating Temperature : -30°C ~ 85°C Package : 115Ball FBGA Type - 8.0mm x 12.0mm 0.8mm ball pitch 1.4mm (Max.) Thickness Single Voltage, 1.7V to 1.95V for Read and Write operations Organization - 16,772,216 x 16 bit ( Word Mode O...