Silicon MOS FETs (Small Signal)
2SK664
Silicon N-Channel MOS FET
For switching
s Features q High-speed switching q S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
2.0±0.2 1.3±0.1 0.65 0.65
unit: mm
0.425
2.1±0.1 1.25±0.1
0.425
0.3–+00.1
1 3
2
0.9±0.1 0.7±0.1 0.2
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipa.
2SK664
Silicon MOS FETs (Small Signal)
2SK664
Silicon N-Channel MOS FET
For switching
s Features q High-speed switching q S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
2.0±0.2 1.3±0.1 0.65 0.65
unit: mm
0.425
2.1±0.1 1.25±0.1
0.425
0.3–+00.1
1 3
2
0.9±0.1 0.7±0.1 0.2
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature
Symbol
VDSS VGSO ID IDP PD Tch Tstg
Ratings 50 8 100 200 150 150
−55 to +150
Unit V V mA mA mW °C °C
0.2±0.1
1: Gate 2: Source 3: Drain
EIAJ: SC-70 S-Mini Type Package (3-pin)
Marking Symbol: 3N Internal Connection
D
G
0 to 0.1 0.15–+00..015
s Electrical Characteristics (Ta = 25°C)
S
Parameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current IDSS
VDS = 10V, VGS = 0
10 µA
Gate to Source leakage current IGSS
VGS = 8V, VDS = 0
50 µA
Drain to Source breakdown voltage VDSS
ID = 100µA, VGS = 0
50
V
Gate threshold voltage
Vth ID = 100µA, VDS = VGS
1.5
3.5 V
Drain to Source ON-resistance RDS(on) ID = 20mA, VGS = 5V
50 Ω
Forward transfer admittance
| Yfs |
ID = 20mA, VDS = 5V, f = 1kHz
20
mS
Input capacitance (Common Source) Ciss
15 pF
Output capacitance (Common Source) Coss
VDS = 5V, VGS = 0, f = 1kHz
5 pF
Reverse transfer capacitance (Common Source) Crss
1 pF
Turn-on time
ton* VDD = 5V.