K6F1008R2M

K6F1008V2M, K6F1008S2M, K6F1008R2M Family Document Title 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial draft Revise - Erase 100ns from KM68FS1000 Family - Add 150ns for KM68FS1000 Family - Add 32-sTSOP1 new package - Add high power version ISB1=5.0µA(Max) - Change VDR(Min) 1.0 to 1.5V Finalize - Concept change high power version to low low power version ISB1=5.0µA(Max) - Change super low power version with special handling ISB1=1.0µA(Max) - Icc & Icc1(Read) decrease 10 to 5mA Revise - Change datasheet format - Remove reverse type package from product - Remove reserved speed bin(100ns) Revise - Add CSP type packaged product. - Improved ICC2 Draft Date March 15, 1996 July 7, 1996 Remark Advance Preliminary www.DataSheet4U.com 1.0 December 1, 1996 Final 2.0 February 26, 1998 Final 3.0 July 29, 1998 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 3.0 July 1998 K6F1008V2M, K6F1008S2M, K6F1008R2M Family CMOS SRAM 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES Process Technology: Full CMOS Organization: 128K x8 bit Power Supply Voltage K6F1008V2M Family: 3.0V ~ 3.6V K6F1008S2M Family: 2.3V ~ 3.3V K...