K6F1616T6B-EF70

K6F1616T6B Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial draft Revised - Changed Isb1(max.) from 25uA to 15uA Finalized - Added Package Type ’48-TBGA - 7.00x7.00’ Draft Date May 21, 2003 June 17, 2003 Remark Preliminary Preliminary 1.0 August 13, 2003 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 August 2003 K6F1616T6B Family FEATURES Process Technology: Full CMOS Organization: 1M x16 Power Supply Voltage: 2.7~3.6V Low Data Retention Voltage: 1.5V(Min) Three State Outputs Package Type: 48-TSOP1-1220F, 48-TBGA - 7.00x7.00 CMOS SRAM GENERAL DESCRIPTION The K6F1616T6B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges. The families also support low data retention voltage for battery back-up operation with low data retention current. 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM PRODUCT FAMILY Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby (ISB1, Typ.) 5µA2) Operating (ICC1, Max) 5mA PKG Type 48-TSOP1-1220F 48-TBGA - 7.00x7.00 K6F1616T6B-F Industrial(-40~85°C)...