K6F2016U4E-F

K6F2016U4E Family Document Title CMOS SRAM 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 1.0 Initial Draft Finalize - Change ICC2 from 21 to 26mA for 55ns product. - Change ICC2 from 17 to 20mA for 70ns product. - Remove "A1 Index Mark" of 48-TBGA package bottom side Revise - Changed 48-TBGA vertical dimension E1(Typical) 0.55mm to 0.58mm E2(Typical) 0.35mm to 0.32mm Draft Date February 21, 2001 April 30, 2001 Remark Preliminary Final 2.0 September 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 2.0 September 2001 K6F2016U4E Family FEATURES CMOS SRAM GENERAL DESCRIPTION The K6F2016U4E families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. 128K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Process Technology: Full CMOS Organization: 128K x16 bit Power Supply Voltage: 2.7~3.3V Low Data Retention Voltage: 1.5V(Min) Three State Outputs Package Type: 48-TBGA-6.00x7.0...