K6F3216U6M

K6F3216U6M Family Document Title 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM www.DataSheet4U.com Revision History Revision No. History 0.0 0.1 Initial draft Revised - Changed ICC2 from 35mA to 40mA for 55ns product from 25mA to 35mA for 70ns product - Changed ISB1 from 30µA to 40 µA - Changed IDR from 15 µA to 20µ A Finalize Draft Date January 31, 2002 July 30, 2002 Remark Preliminary Preliminary 1.0 December 18, 2002 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 December 2002 K6F3216U6M Family FEATURES Process Technology: Full CMOS Organization: 2M x16 Power Supply Voltage: 2.7~3.3V Low Data Retention Voltage: 1.5V(Min) Three State Outputs Package Type: 55-TBGA-7.50x12.00 CMOS SRAM www.DataSheet4U.com GENERAL DESCRIPTION The K6F3216U6M families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. 2M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM PRODUCT FAMILY Power Dissipation Product Family K6F...