K6F3216U6M Family
Document Title
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
CMOS SRAM www.DataShee...
K6F3216U6M Family
Document Title
2M x16 bit Super Low Power and Low
Voltage Full
CMOS Static RAM
CMOS SRAM www.DataSheet4U.com
Revision History
Revision No. History
0.0 0.1 Initial draft Revised - Changed ICC2 from 35mA to 40mA for 55ns product from 25mA to 35mA for 70ns product - Changed ISB1 from 30µA to 40 µA - Changed IDR from 15 µA to 20µ A Finalize
Draft Date
January 31, 2002 July 30, 2002
Remark
Preliminary Preliminary
1.0
December 18, 2002
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0 December 2002
K6F3216U6M Family
FEATURES
Process Technology: Full
CMOS Organization: 2M x16 Power Supply
Voltage: 2.7~3.3V Low Data Retention
Voltage: 1.5V(Min) Three State Outputs Package Type: 55-TBGA-7.50x12.00
CMOS SRAM www.DataSheet4U.com
GENERAL DESCRIPTION
The K6F3216U6M families are fabricated by SAMSUNG′s advanced full
CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention
voltage for battery back-up operation with low data retention current.
2M x 16 bit Super Low Power and Low
Voltage Full
CMOS Static RAM
PRODUCT FAMILY
Power Dissipation Product Family K6F...