K6F4008U2E Family
CMOS SRAM
Document Title
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision ...
K6F4008U2E Family
CMOS SRAM
Document Title
512K x8 bit Super Low Power and Low
Voltage Full
CMOS Static RAM
Revision History
Revision No. History 0.0 Initial Draft
1.0 Finalize
Draft Date
Remark
October 25, 2000 Preliminary
March 12, 2001 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
- 1 - Revision 1.0 March 2001
K6F4008U2E Family
CMOS SRAM
512K x 8 bit Super Low Power and Low
Voltage Full
CMOS Static RAM
FEATURES
Process Technology: Full
CMOS Organization: 512K x8 bit Power Supply
Voltage: 2.7~3.3V Low Data Retention
Voltage: 1.5V(Min) Three State Outputs Package Type: 48(36)-TBGA-6.00x7.00
GENERAL DESCRIPTION
The K6F4008U2E families are fabricated by SAMSUNG′s advanced full
CMOS process technology. The f...