K6F4016U6G Family
Document Title
Preliminary CMOS SRAM
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RA...
K6F4016U6G Family
Document Title
Preliminary
CMOS SRAM
256Kx16 bit Super Low Power and Low
Voltage Full
CMOS Static RAM
Revision History
Revision No. History
0.0 Initial Draft
Draft Date
June 11, 2003
Remark
Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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Revision 0.0 June 2003
K6F4016U6G Family
FEATURES
Preliminary
CMOS SRAM
GENERAL DESCRIPTION
The K6F4016U6G families are fabricated by SAMSUNG′s advanced full
CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The family also supports low data retention
voltage for battery back-up operation with low data retention current.
256K x 16 bit Super Low Power and Low
Voltage Full
CMOS Static RAM
Process Technology: Full
CMOS Organization: 256K x16 bit Power Supply
Voltage: 2.7~3.3V Low Data Retention
Voltage: 1.5V(Min) Three State Outputs Package Type: 48-TBGA-6.00x7.00
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby (ISB1, Typ.) 3µA2) Operating (ICC1, Max) 4mA PKG Type
K6F4016U6G-F
Industrial(-40~85°C)
2.7~3.3V
551)/70ns
48-TBGA-6.00x7.00
1. The parameter is measured with 30pF test load. 2. Typical value is measured...